Applied Physics Letters · 1976 · 17 citations · 6 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsOptical MaterialsSemiconductor DevicesIon ImplantationOptoelectronic DevicesOptoelectronic MaterialsPhotovoltaic DevicesPhotovoltaic MaterialsSolar Cell MaterialsPhotodiodesSilicon Photodiodes
Photodiodes have been produced by recoil implantation of Al and Ga into Si, using inert-gas-ion bombardment. Yields as large as 40 implanted Ga atoms per incoming Xe ion have been observed. The diodes were characterized by optical-window thicknesses from 0.14 to ∼1 μm.
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Defect studies in crystals by means of channeling
E. Bøgh · Canadian Journal of Physics · 1968 · 364 citations
The theory of recoil implantation
R.S. Nelson · Radiation Effects · 1969 · 69 citations