Publication | Open Access
Electron scattering in AlGaN/GaN structures
47
Citations
13
References
2004
Year
Wide-bandgap SemiconductorElectron ScatteringDensity RangeEngineeringPhysicsCondensed Matter PhysicsApplied PhysicsQuantum MaterialsMobility Lifetime τTAluminum Gallium NitrideGan Power DeviceQuantum Lifetime τQCategoryiii-v SemiconductorQuantum Engineering
We present data on mobility lifetime τt, quantum lifetime τq, and cyclotron resonance lifetime τCR, of a sequence of high-mobility two-dimensional electron gases in the AlGaN/GaN system, covering a density range of 1 to 4.5×1012 cm−2. We observe a large discrepancy between τq and τCR(τq∼τCR/6), and explain it as the result of density fluctuations of only a few percent. Therefore, only τCR—and not τq—is a reliable measure of the time between electron-scattering events in these specimens. The ratio τt/τCR increases with increasing density in this series of samples, but scattering over this density range remains predominantly in the large-angle scattering regime.
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