Growth of Polycrystalline Tubular Silicon Carbide Yajima-Type Reaction at the Vapor−Solid Interface

Abstract

Polycrystalline tubular SiC on Si is prepared by reacting MeSiHCl2 vapor and Ca thin film on Si at 773−923 K followed by heat treatment at 1273 K. The reaction is a solvent-free Yajima-type process taking place at the vapor−solid interface. The products phase-segregate into a cable-like radial heterostructure composed of a core of CaCl2 and a shell of SiCxHy. After removal of the CaCl2 core, the layer of polycrystalline SiC tubes on Si can emit electrons at a low applied field of 2.5 V/μm with a current of 10 μA/cm2.