Preparation and Crystallization of Tin-doped and Undoped Amorphous Indium Oxide Films Deposited by Sputtering

Abstract

Tin-doped and undoped amorphous indium oxide films were prepared by dc magnetron sputtering without substrate heating at relatively high total gas pressures and relatively large target-substrate distance. The structural and electrical properties of these films were investigated by X-ray diffraction and Hall-effect measurements. The amorphous tin-doped indium oxide ( a -ITO) films were crystallized at a temperature about 30°C higher than that for amorphous indium oxide ( a -IO) films.