Japanese Journal of Applied Physics · 1999 · 85 citations · 7 references
Natural SciencesMaterials SciencePhysicsCrystal StructureElectronic MaterialsThin FilmsAmorphous MaterialsAmorphous SolidsSemiconductor Thin FilmsThin Film Electrical PropertiesThin-film DepositionThin-film MaterialsAmorphous OxidesElectrical PropertiesHall Effect MeasurementsIndium Tin Oxide Thin FilmsThin Oxide FilmsThin Oxide LayersTin-doped Indium OxideX-ray Diffraction Analysis
Tin-doped and undoped amorphous indium oxide films were prepared by dc magnetron sputtering without substrate heating at relatively high total gas pressures and relatively large target-substrate distance. The structural and electrical properties of these films were investigated by X-ray diffraction and Hall-effect measurements. The amorphous tin-doped indium oxide ( a -ITO) films were crystallized at a temperature about 30°C higher than that for amorphous indium oxide ( a -IO) films.
7
On the homogeneity of sputter-deposited ITO films Part I. Stress and microstructure
T.J. Vink, W. Walrave, J. Daams et al. · Thin Solid Films · 1995 · 116 citations
Natural Sciences, Materials Engineering, Materials Science +12