The physical state of ion implanted solids

Abstract

Abstract The destruction of the crystalline lattice during ion implantation is discussed in general terms together with its post-irradiation annealing. It is shown that the creation of mobile defects during implantation can give rise to an irradiation enhanced diffusion which can in some cases dominate thermally activated diffusion. The expected state of implanted impurity atoms is discussed in some detail with special attention to the formation and stability of precipitate phases in an irradiation environment.