Raman Scattering from Donor and Acceptor Impurities in Silicon

Abstract

We report the observation of electronic Raman scattering from phosphorus donors and boron acceptor impurities in silicon. We find that the most important intermediate states involve interband transitions, and that this has important consequences for the intensity of the scattering. We also report observation of phonon-Raman scattering involving creation of one zone-center optical phonon with subsequent decay through the anharmonic interaction into two acoustic phonons.