Room temperature continuous wave operation of 671 nm wavelength GaInAsP/AlGaAs VSIS lasers

Abstract

Room-temperature continuous-wave (CW) operation of a liquid-phase epitaxy (LPE)-grown GaInAsP/AlGaAs laser that uses a V-channel substrate inner stripe (VSIS) structure to obtain current confinement and transverse mode control is discussed. The threshold current and lasing wavelength were 77 mA and 671 nm, respectively, and the temperature dependence of the threshold current was such that the characteristic temperature was 75 K.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>