Publication | Closed Access
Si incorporation in InP using a disilane source in metalorganic vapour phase epitaxy at atmospheric pressure
17
Citations
11
References
1989
Year
Materials ScienceEngineeringSi IncorporationSurface ScienceApplied PhysicsAtmospheric PressureVacuum DeviceChemistryMolecular Beam EpitaxyDisilane SourceEpitaxial GrowthChemical Vapor DepositionSilicon On Insulator
| Year | Citations | |
|---|---|---|
Page 1
Page 1