Self-assembled lamellar MoS ₂ , SnS ₂ and SiO ₂ semiconducting polymer nanocomposites

Abstract

Lamellar nanocomposites based on semiconducting polymers incorporated into layered inorganic matrices are prepared by the co-assembly of organic and inorganic precursors. Semiconducting polymer-incorporated silica is prepared by introducing the semiconducting polymers into a tetrahydrofuran (THF)/water homogeneous sol solution containing silica precursor species and a surface-active agent. Semiconducting polymer-incorporated MoS(2) and SnS(2) are prepared by Li intercalation into the inorganic compound, exfoliation and restack in the presence of the semiconducting polymer. All lamellar nanocomposite films are organized in domains aligned parallel to the substrate surface plane. The incorporated polymers maintain their semiconducting properties, as evident from their optical absorption and photoluminescence spectra. The optoelectronic properties of the nanocomposites depend on the properties of both the inorganic host and the incorporated guest polymer as demonstrated by integrating the nanocomposite films into light-emitting diodes. Devices based on polymer-incorporated silica and polymer-incorporated MoS(2) show no diode behaviour and no light emission due to the insulating and metallic properties of the silica and MoS(2) hosts. In contrast, diode performance and electroluminescence are obtained from devices based on semiconducting polymer-incorporated semiconducting SnS(2), demonstrating that judicious selection of the composite components in combination with the optimization of material synthesis conditions allows new hierarchical structures to be tailored for electronic and optoelectronic applications.