Aku-band gold/baxsr1-xtio3/laalo3 conductor/thin-film ferroelectric microstrip line phase shifter for room-temperature communications applications

Abstract

We report on the performance of a Ku-band gold/Ba0.5Sr0.5TiO3/LaAlO3 (Au/BSTO/LAO) coupled microstip line phase shifter fabricated with a 370 nm thick BSTO film. Two hundred degrees of contiguous relative insertion phase shift (ΔϕS21), with insertion losses of 4.6 dB, were measured at room temperature, 14.3 GHz, and maximum dc voltage of 400 V. These results represent significant progress toward viable compact, low-loss, thin-film ferroelectric-based phase shifters at room temperature. ©1999 John Wiley & Sons, Inc. Microwave Opt Technol Lett 20: 53–56, 1999.