Ultra-fast switching in solution processed quantum dot based non-volatile resistive memory

Abstract

In this letter, we report a facile quantum dot based non-volatile resistive memory device with a switching speed of 10 ns and ON/OFF ratio of 10 000. The device showed excellent endurance characteristics for 100 000 switching cycles. Retention tests showed good stability and the devices are reproducible. Memory operating mechanism is proposed based on charge trapping in quantum dots with AlOx acting as barrier. This mechanism is supported by marked variation in capacitance value in ON and OFF states.