(GaMn)As: GaAs-based III–V diluted magnetic semiconductors grown by molecular beam epitaxy - Concepedia

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(GaMn)As: GaAs-based III–V diluted magnetic semiconductors grown by molecular beam epitaxy

190

Citations

8

References

1997

Year

Takashi Hayashi, Masaaki Tanaka, Tatau Nishinaga, Hiroshi Shimada, H. Tsuchiya, Youiti Otuka

Journal of Crystal Growth

SemiconductorsSemiconductor TechnologyElectronic DevicesEngineeringPhysicsApplied PhysicsMagnetic SemiconductorsGaas-based Iii–vMolecular Beam EpitaxyCompound Semiconductor

References

	Year	Citations

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