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Structure formation upon reactive direct current magnetron sputteringof transition metal oxide films
74
Citations
22
References
2004
Year
Materials EngineeringMaterials ScienceMagnetismObserved BacksputteringEngineeringMaterial AnalysisPhysicsOxide ElectronicsSurface ScienceApplied PhysicsDifferent Transition MetalEnergetic ParticlesThin FilmsChemical DepositionStructure FormationThin Film ProcessingMagnetoresistance
A comparative study of reactive direct current magnetron sputtering for different transition metal oxides reveals crystalline films at room temperature for group 4 and amorphous films for groups 5 and 6. This observation cannot be explained by the known growth laws and is attributed to the impact of energetic particles, originating from the oxidized target, on the growing film. This scenario is supported by measured target characteristics, the evolution of deposition stress of the films, and the observed backsputtering.
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