Characterization of excess carbon in cubic SiC films by infrared absorption

Abstract

The behavior of excess carbon in cubic SiC films was investigated using infrared absorption spectroscopy of modes which were optically activated by defect-induced strain in the film. The results show that the excess carbon which is formed interstitially in the region of SiC grain boundaries as an interstitial phase, consists of both crystalline and amorphous phases. The crystalline phase declines and the amorphous phase grows when the growth temperature is increased above 700 °C.