Journal of Applied Physics · 1985 · 62 citations · 17 references
Natural SciencesMaterials EngineeringMaterials ScienceCondensed Matter PhysicsCrystal StructureMaterials PhysicsMetalsSuperconducting MaterialsSuperconducting Thin FilmsMaterial Behaviour At Elevated TemperaturesMethaneNbn Thin FilmsNitride Thin FilmsNitrides Thin FilmsSputter DepositionSubstrate Temperature EffectsX-ray Diffraction Analysis
The properties of rf-magnetron-sputtered NbN have been investigated for substrate temperatures from 200°C to 750°C as a function of the partial pressure of methane introduced into the Ar–N2 sputtering gas mixture. The best films were prepared at elevated substrate temperatures with approximately 2% methane added to the sputter gas. These films also had resistivities approximately 70 μΩ cm. At lower substrate temperature, T∼200°C, the best attained Tc was approximately 13.3 K with a resistivity of 140 μΩ cm. The crystal structure of these materials was investigated using x-ray diffraction and Read x-ray photographs. Those films prepared with no added methane were found to be two-phase δ and ε NbN. The addition of a small amount of methane produced single δ phase NbN with a predominant (200) preferrential orientation. The δ phase lattice parameter was determined to vary approximately from 4.39 Å to 4.45 Å as the amount of methane was increased. The effect of hydrogen doping on NbN was to produce multiphase NbN with the ε, δ phases and some evidence of the β phase. These material properties are of importance for the design and fabrication of NbN electrode Josephson tunnel junctions.
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Properties of NbN thin films deposited on ambient temperature substrates
D. D. Bacon, A. T. English, S. Nakahara et al. · Journal of Applied Physics · 1983 · 116 citations