Solution-processed oxide semiconductor SnO in p-channel thin-film transistors

Abstract

A p-type inorganic oxide semiconductor, tin monoxide (SnO), is developed by a solution process. SnO thin-film transistors (TFTs) in the p-channel enhancement mode are fabricated by spin-coating a precursor solution followed by postannealing, showing a highest field-effect mobility of 0.13 cm2 V−1 s−1, threshold voltage of −1.9 V, and on/off drain current ratio of 85.