Electroluminescence emission from light-emitting diode of p-ZnO/(InGaN/GaN) multiquantum well/n-GaN

Abstract

We report on the fabrication and characteristics of light-emitting diodes (LEDs) which consist of antimony (Sb) doped p-ZnO, (InGaN/GaN) multiquantum well (MQW), and n-GaN. An electroluminescence (EL) emission at a wavelength of 468 nm is observed from the hybrid LEDs after thermal annealing at 750 °C, showing that Sb-doped p-ZnO can be used as a hole supplying layer in hybrid LEDs. Furthermore, the EL peaks are redshifted as the injection current is increased, indicating that the compressive strain in MQW layers is relaxed due to Sb-doped p-ZnO layer.