Optics Letters · 1997 · 101 citations · 4 references
EngineeringElectrical EngineeringOpticsOptoelectronicsPhotonicsLaser OpticsLaser PhysicsOptical AmplifiersOptical SourcesOptoelectronic DevicesUltrafast OpticsBeam DiffractionHigh-power LasersLaser Beam QualityLithium NiobateOptical Parametric AmplificationQ SwitchingQ-switched LasersUltrashort Pulse Generation
High-power passively Q-switched microchip lasers produce 157-muJ pulses of 1-ns duration in a single-frequency, diffraction-limited output beam. The unfocused 1.064-mum output of these devices has been used to drive periodically poled lithium niobate optical parametric amplifiers at wavelengths between 1.4 and 4.3 mum . With a peak conversion efficiency of nearly 100%, these devices generate 100-kW, subnanosecond pulses in the mid IR, with a beam quality that is better than two times diffraction limited.
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