Effect of pressure on defect-related emission in heavily silicon-doped GaAs

Abstract

We report cryogenic high-pressure measurements of a defect-related emission at 1.25 eV in silicon-doped GaAs. The pressure measurements prove that the 1.25-eV photon energy is relative to the conduction band, implying a deep defect level 0.30 eV above the valence band and an electron-capture process from the conduction band into the defect. The defect level moves up in the band gap at a rate of 23\ifmmode\pm\else\textpm\fi{}3 meV/GPa. These results are consistent with a vacancy-related defect level, possibly stemming from a gallium-vacancy--silicon-at-gallium (second-nearest-neighbor) defect complex.