Effect of nucleation layer on the magnetic properties of GaMnN

Abstract

The effects of nucleation layer and growth temperature on the magnetic properties of GaMnN have been investigated. It was found that the largest magnetic moment was measured in films prepared on metalorganic chemical vapor deposition (MOCVD) GaN buffers at a growth temperature of 700 °C. Extended x ray absorption fine structure measurements indicate that the improved magnetic quality of the films grown on MOCVD layers versus gas source molecular beam epitaxy nucleation layers is not due to a change in the lattice position of the Mn and is more likely due to a reduction in defect density. Growth temperature was also found to have a significant impact on the magnetic properties, with the optimal growth temperature found to be 700 °C.