Japanese Journal of Applied Physics · 1992 · 54 citations · 2 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsMaterials ChemistryThin FilmsDielectricsSemiconductor Thin FilmsThin Film AnnealingThin Film Electrical PropertiesThin-film DepositionThin-film MaterialsAnnealing Temperature EffectsDielectric ConstantHeat Treatment EffectsIndium Tin Oxide Thin FilmsOxide DielectricsRadio Frequency SputteringThin Oxide FilmsThin-film Dielectrics
Hafnium dioxide (HfO 2 ) thin films are deposited on indium-tin-oxide (ITO)-coated glass substrates by the radio-frequency (RF) sputtering method using a HfO 2 sintered target. The deposition conditions, dielectric loss and dielectric constant of HfO 2 films before and after heat treatment are studied. The best deposition conditions for HfO 2 films are RF power 200 W, substrate temperature 100°C and sputtering gas pure Ar. The maximum dielectric constants are about 150 and 45 with 1 kHz signal excitation before and after annealing, respectively. They are higher than any ever reported.
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