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Temperature independence of the spin-injection efficiency of a MgO-based tunnel spin injector
103
Citations
11
References
2005
Year
Categoryquantum ElectronicsEngineeringTemperature DependentMagnetic ResonanceSpintronic MaterialSpin DynamicElectroluminescence PolarizationSpin PhenomenonMagnetoresistanceQuantum EngineeringSemiconductorsMagnetismQuantum MaterialsSpin-charge-orbit ConversionQuantum ScienceTemperature IndependencePhysicsQuantum DeviceSpin-injection EfficiencySpintronicsQuantum TechnologyNatural SciencesCircular PolarizationApplied PhysicsCondensed Matter PhysicsQuantum DevicesQuantum Photonic DeviceOptoelectronics
The spin polarization of electrons injected into GaAs from a CoFe∕MgO(100) tunnel spin injector is inferred from the circular polarization of light emitted from a GaAs-based quantum well (QW) detector. The circular polarization strongly depends on the spin and electron hole recombination lifetimes in the QW. Using time-resolved optical techniques, we show that these lifetimes are highly temperature dependent. A peak in the charge lifetime versus temperature is likely responsible for the previously observed dip in the electroluminescence polarization. Evidence for a temperature-independent spin injection efficiency of ∼70% from 10 K to room temperature is found.
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