Elastic Moduli of Silicon vs Hydrostatic Pressure at 25.0°C and − 195.8°C

Abstract

Ultrasonic wave velocities and elastic moduli for high purity silicon (resistivity ∼400 Ω-cm) have been measured as a function of hydrostatic pressure and temperature in the ranges 0–30 000 psi (0–2100 kg/cm2) and − 195.8° to 25°C. Variations of moduli with pressure are found to be nearly independent of temperature in the range listed. For 25°C(Δc11/Δp)=4.33, (Δc12/Δp)=4.19, (Δc44/Δp)=0.80, (ΔK/Δp)=4.24. For − 195.8°C(Δc11/Δp)=4.29, (Δc12/Δp)=4.20, (Δc44/Δp)=0.75, (ΔK/Δp)=4.23.