Publication | Closed Access
Study of photoluminescence in nanocrystalline silicon/amorphous silicon multilayers
78
Citations
0
References
1995
Year
Materials SciencePhotoluminescenceEngineeringPhysicsNanoelectronicsNatural SciencesVisible PhotoluminescenceApplied PhysicsNanocrystalline SiliconSemiconductor Device FabricationChemistryAmorphous SolidSilicon On InsulatorOptoelectronicsChemical Vapor DepositionBand Gap
We report in this letter the observation of visible photoluminescence (PL) at room temperature from hydrogenated nanocrystalline silicon (nc-Si:H)/amorphous silicon (a-Si:H) multilayers (MLs) prepared in a plasma enhanced chemical vapor deposition system without any postprocessing. The PL peak wavelength can be controlled, blueshifting from 750 to 708 nm, through reducing the width of the nc-Si:H sublayers from 4.0 to 2.1 nm. Quantum size effect in nc-Si:H sublayers of the ML is responsible for the emission above the band gap of bulk crystal Si.