Dependence of the stimulated emission threshold of injection lasers on the duration of pumping current pulses

Abstract

An experimental investigation was made of the dependence of the stimulated emission threshold of GaAs–AlAs injection lasers on the duration of pumping pulses in the 2–100 nsec range. The effective lifetime of the injected electrons was determined for lasers with one diffused p–n junction (~1 nsec), with one heterojunction (~2.5 nsec), and with two heterojunctions (3–6 nsec).