Anomalous behavior of negative bias illumination stress instability in an indium zinc oxide transistor: A cation combinatorial approach

Abstract

Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation Seungha Oh, Bong Seob Yang, Yoon Jang Kim, Myeong Sook Oh, Mi Jang, Hoichang Yang, Jae Kyeong Jeong, Cheol Seong Hwang, Hyeong Joon Kim; Anomalous behavior of negative bias illumination stress instability in an indium zinc oxide transistor: A cation combinatorial approach. Appl. Phys. Lett. 27 August 2012; 101 (9): 092107. https://doi.org/10.1063/1.4748884 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAIP Publishing PortfolioApplied Physics Letters Search Advanced Search |Citation Search