Effect of screening by two-dimensional charge carriers on the binding energy of excitonic states in GaAs/AlGaAs quantum wells

Abstract

The spectrum of excitonic excited states in GaAs/AlGaAs quantum wells of different width is studied together with its change due to the screening of electron-hole interaction by two-dimensional electrons. The exciton binding energy decreases sharply with an increase in the concentration of two-dimensional electrons. The temperature dependence of screening parameters is studied for the ground and excited excitonic states down to ultralow temperatures T=50 mK.