Growth of ferromagnetic semiconductor: (Ga, Cr)As

Abstract

A type of GaAs-based ferromagnetic semiconductor, (Ga, Cr)As, was successfully prepared by low-temperature molecular-beam epitaxy. The (Ga, Cr)As thin film shows a flat surface up to the Cr content x=0.18. However, when Cr content x exceeded 0.20, the roughness of the film became larger. The ferromagnetic ordering of the semiconductor sample with the Cr content of x=0.11 was observed. The electronic structures of (Ga, Cr)As were characterized by x-ray absorption spectroscopy (XAS). The XAS spectra show different line shapes in different Cr content.