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Performance of a low-loss pulsed-laser-deposited Nd:Gd_3Ga_5O_12 waveguide laser at 106 and 094 µm
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Citations
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References
1997
Year
EngineeringLaser ScienceLaser ApplicationsLaser MaterialGgg FilmHigh-power LasersOptical PropertiesLaser PerformancePulsed Laser DepositionMaterials SciencePhotonicsPhysicsLaser Processing TechnologyLaser-assisted DepositionAdvanced Laser ProcessingApplied PhysicsLow-loss Pulsed-laser-deposited NdLow-propagation-loss Neodymium-doped GdOptoelectronics
We report the laser performance of a low-propagation-loss neodymium-doped Gd(3)Ga(5)O(12) (Nd:GGG) waveguide fabricated by pulsed-laser deposition. An 8- mum -thick crystalline Nd:GGG film grown upon an undoped Y(3)Al(5)O(12) substrate lases at 1.060 and 1.062 microm when pumped by a Ti:sapphire laser operating at 740 or 808nm.Using a 2.2% output coupler, we observed a 1060-nm laser threshold of 4mW and a slope efficiency of 20%. Laser action was also achieved, for what we believe is the first time in Nd:GGG, on the quasi-three-level 937-nm transition. With a 2% output coupler at this wavelength a laser threshold of 17mW and a 20% slope efficiency were obtained. This demonstration of low propagation loss combined with the fact that these waveguides have a very high numerical aperture (0.75) makes pulsed-laser-deposited thin films attractive for high-power diode-pumped devices.
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