Applied Physics Express · 2010 · 24 citations · 10 references
Natural SciencesMaterials EngineeringMaterials ScienceMaterials CharacterizationSurface ScienceThin FilmsAluminum OxidesMetal OxidesOptical Thin FilmsOxide SemiconductorsThin Film Optical PropertiesThin-film DepositionAlumina Thin FilmsFilm Growth MechanismsLight ScatteringLight Scattering AnalysisSeed Layer DepositionSeed Layer FormationSeed LayersThin Oxide Layers
ZnO:Al films were prepared using a two-step process involving the control of oxygen pressure. The seed layers were deposited under various Ar to oxygen pressure ratios, and the bulk layers were prepared under pure Ar. The growth mode was systematically examined and clearly different microstructures were shown according to the deposition condition of the seed layer. With increase of oxygen pressure, the crystallinity and the degree of (002) texturing increased. The haze values of etched films also increased with increasing oxygen pressure, which was explained by the grain-structure of as-deposited films.
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ZnO epitaxy on (111) Si using epitaxial Lu2O3 buffer layers
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