Field effect enhanced quantum dot resonant tunneling diode for high dynamic range light detection

Abstract

A field effect enhanced quantum dot resonant tunneling diode is proposed and demonstrated to improve the detection dynamic range for low light imaging application. Using the cross-wire device geometry, a lateral two dimensional electron gas (2DEG) current is formed in the quantum well channel together with the normal resonant tunneling current for quantum dot modulation. A peak photoresponsivity of the order of 1010 A/W and a light detection saturation level up to 105 photons per second at 77 K are achieved when the 2DEG current makes the main photocurrent contribution.