Publication | Closed Access
Evaluation of SiC BJTs for High-Power DC–DC Converters
61
Citations
19
References
2013
Year
Electrical EngineeringEngineeringSic BjtsHigh Voltage EngineeringEnergy EfficiencyPower DevicesPower DevicePower Electronics Converter50-Kw Dc–dc ConverterPower Semiconductor Device75-Khz All-sic ConverterElectric Power ConversionPower Electronic SystemsPower SemiconductorsPower ElectronicsSic ConverterPower Electronic Devices
The design of a 200-A, all-SiC power-module-based on bipolar junction transistor devices is described, and the impact of the module is assessed on the performance of a 50-kW dc–dc converter for electric vehicle applications, particularly the overall weight and efficiency. Using a hard-switching dual-interleaved topology, which has proven high efficiency and high-power density capability, the operation of a 50-kW, 75-kHz all-SiC converter is compared with that of an insulated-gate bipolar transistor-based silicon converter, switching at 25 kHz, each providing 600-V output. The results show that the total losses are reduced by almost 40%, whilst the overall weight is reduced by 27%, achieving a power density of 10.5 kW/kg. Experimental results of the SiC converter operating at 220–600 V, 52.8 kW are provided, showing an efficiency of 97%.
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