The growth and morphology of epitaxial multilayer graphene

TLDR

Epitaxial graphene on SiC shows promise for post‑CMOS electronics, but progress depends on a detailed understanding of its structure and growth. This review focuses on the current state of epitaxial graphene research concerning the structure of graphene grown on SiC. The review examines growth on the two polar faces of hexagonal SiC, detailing techniques, morphology, interface structure, stacking order, and their links to electronic properties.

Abstract

The electronic properties of epitaxial graphene grown on SiC have shown its potential as a viable candidate for post-CMOS electronics. However, progress in this field requires a detailed understanding of both the structure and growth of epitaxial graphene. To that end, this review will focus on the current state of epitaxial graphene research as it relates to the structure of graphene grown on SiC. We pay particular attention to the similarity and differences between graphene growth on the two polar faces, (0001) and , of hexagonal SiC. Growth techniques, subsequent morphology and the structure of the graphene/SiC interface and graphene stacking order are reviewed and discussed. Where possible the relationship between film morphology and electronic properties will also be reviewed.