Applied Physics Letters · 1972 · 40 citations · 8 references
EngineeringElectrical EngineeringPhysicsElectromagneticsElectromagnetismMicrowave EngineeringHigh-frequency Semiconductor DevicesMicrowave MeasurementsMicrowave Semiconductor DevicesHigh-frequency CharacterizationMicrowave Circuit ModelingMicrowave DevicesMicrowave DiagnosticsMicrowave ModelingPeak VelocityVelocity Field Characterization
Measurements of the velocity-electric field characteristic of n-type InP at 9.5 and 35 GHz are reported. The results indicate a peak velocity of about 2.7×107 cm/sec and threshold field of 12 kV/cm. The measurements are in good agreement with a two-valley model of conduction.
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Three-level oscillator: a new form of transferred-electron device
C. Hilsum, H.D. Rees · Electronics Letters · 1970 · 124 citations
Band Structure and High-Field Transport Properties of InP
L. W. James, J. P. Van Dyke, Frank Herman et al. · Physical review. B, Solid state · 1970 · 88 citations
Three-level transferred-electron effects in InP
H.D. Rees, C. Hilsum · Electronics Letters · 1971 · 27 citations