2011 · 87 citations · 34 references
EngineeringPower DevicesSolid State TransformerSubstation WorkPower Electronics ConverterElectric Power ConversionPower ElectronicsElectric Power TransmissionGrid InterconnectionElectrical EngineeringSic IgbtPower Semiconductor DeviceComputer EngineeringBasic Power TopologySmart GridPower DeviceSst TopologyPower InverterElectric Power Distribution
Building high‑efficiency, lightweight, magnetically isolated solid‑state transformers for 13.8 kV grid connection is difficult with existing 6.5 kV Si IGBTs because of high switching and conduction losses, but SiC devices mitigate these losses and motivate new topologies. The paper proposes a basic power topology for a solid‑state transformer that employs 15 kV SiC IGBTs. The topology is based on a solid‑state transformer configuration using 15 kV SiC IGBTs to achieve high‑voltage grid connectivity. The proposed SST reaches a targeted efficiency of 98 %, with simulation results for a 1 MVA configuration presented.
Basic power topology for a Solid State Transformer (SST) with new 15 kV SiC IGBT devices is discussed. It is difficult to build high efficient, light weight, magnetically isolated solid state transformer for high voltage (13.8 kV) grid connectivity with existing Si 6.5 kV rated IGBTs and diodes. Existing state of the art high voltage (6.5 kV), high speed power devices (IGBT) cause considerable amount of loss (switching and conduction loss). With the advent of SiC devices these limitations are largely mitigated and this provides the motivation for new power topologies. The targeted efficiency of the proposed SST is 98%. Simulation results for a 1 MVA proposed SST topology is presented.
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Fang Zheng Peng · IEEE Transactions on Industry Applications · 2003 · 3.2K citations
Dc-to-dc Power Conversion, Electrical Engineering, Engineering +8