Chemisorption of atomic hydrogen on the silicon (111) 7 × 7 surface

Abstract

The chemisorption of atomic hydrogen on the silicon (111) 7 \ifmmode\times\else\texttimes\fi{} 7 surface has been studied using ionneutralization spectroscopy and ultraviolet-photoemission spectroscopy with the help of low-energy electron diffraction and work-function measurement. Both spectroscopies showed that the dangling-bond surface state disappears when the clean surface is exposed to atomic hydrogen. Chemisorbed hydrogen produces two sharp peaks in the surface density of states at approximately -10 and -12 eV from the vacuum level. These results are in good quantitative agreement with the recent theoretical works by Appelbaum and Hamann and by Pandey.