Publication | Closed Access
Measurement of Nonlinear Polarization of KTaO3 using Schottky Diodes
62
Citations
7
References
1965
Year
Semiconductor TechnologyRoom TemperatureElectrical EngineeringSemiconductor DeviceEngineeringElectro-optics DevicePolarization ImagingOptical PropertiesNon-linear OpticApplied PhysicsTime-dependent Dielectric BreakdownSemiconductor MaterialDepletion LayerElectrical PropertyCapacitance DataNonlinear Polarization
Capacitance vs bias voltage data are presented for Au–KTaO3 surface barrier Schottky diodes. Substantial deviations from the normal Schottky capacitance relationship have been observed and attributed to a field-dependent dielectric constant in the depletion layer. From the capacitance data obtained at room temperature, ε vs E and P vs E curves have been calculated for KTaO3 and found to be consistent with previous measurements made using conventional techniques at 4.2°K.
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