Atomically thin graphene plane electrode for 3D RRAM

Abstract

3Å thick graphene edge was employed in the bit-cost scalable vertical RRAM structure to drastically reduce the total stack height to a single atomic layer. Two-layer 3D-stacked HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> RRAM with graphene planar electrode (G-RRAM) is demonstrated in a 3D cross-point architecture with the edge of the graphene plane electrode serving as the bottom electrode of the RRAM. Exceptional memory window (>80×), low reset current (~20 μA), and suitable set/reset voltages (2 to 4 V) were achieved. Large memory window and low SET compliance ensures low reset current and low power consumption. Resistance components were separately measured to verify the role of graphene/oxide interface and the graphene sheet resistance. This work is a significant step toward extreme vertical scaling of 3D vertical stacked memory structures.