Arrays of thermally evaporated PbSe infrared photodetectors deposited on Si substrates operating at room temperature

Abstract

Thermally evaporated polycrystalline lead selenide was used to make detector arrays on high-resistivity Si substrates, for use as infrared photodetectors in the range. The arrays were made using standard photolithographic methods and a process fully compatible with the technologies used in the microelectronics industry. After activation at high temperature in an atmosphere, excellent uniformity and room-temperature peak detectivities up were obtained. The spectral response at 273 K of the detectors went up to , with peak responsivity of at . These arrays have been used to develop compact gas sensors with the addition of integrated bandpass multilayer optical filters.