Photodeposition of aluminum oxide and aluminum thin films

Abstract

Uniform films of Al2O3 have been photodeposited using an excimer laser operating at 248 nm (KrF) or at 193 nm (ArF) and trimethylaluminum and N2O as the reactants. Deposition rates were typically 2000 Å/min and the physical, chemical, and electrical properties of the photodeposited Al2O3 films are comparable to films deposited using conventional techniques. Properties of photodeposited aluminum films are also presented.