Applied Physics Letters · 1983 · 106 citations · 20 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSurface ScienceThin FilmsAluminum OxidesLaser Material ProcessingLaser Surface ProcessingOptical Thin FilmsOptoelectronic MaterialsThin Film Optical PropertiesElectrical PropertiesElectrical Properties AnalysisExcimer LasersPulsed Laser Deposition
Uniform films of Al2O3 have been photodeposited using an excimer laser operating at 248 nm (KrF) or at 193 nm (ArF) and trimethylaluminum and N2O as the reactants. Deposition rates were typically 2000 Å/min and the physical, chemical, and electrical properties of the photodeposited Al2O3 films are comparable to films deposited using conventional techniques. Properties of photodeposited aluminum films are also presented.
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