The International Journal of High Performance Computing Applications · 2013 · 43 citations · 20 references
EngineeringComputer ScienceHigh-performance ComputingComputational PhysicsMicroelectronicsParallel ComputingAtomistic SimulationDensity Functional TheoryDevice ModelingDevice SimulationNanoelectronicsNanowiresComputational NanotechnologyField-effect Transistor SimulationMessage Passing InterfaceNanodevice SimulationParallelizationSemiconductor NanowiresSilicon Device SimulationSilicon Nanowires
Silicon nanowires are potentially useful in next-generation field-effect transistors, and it is important to clarify the electron states of silicon nanowires to know the behavior of new devices. Computer simulations are promising tools for calculating electron states. Real-space density functional theory (RSDFT) code performs first-principles electronic structure calculations. To obtain higher performance, we applied various optimization techniques to the code: multi-level parallelization, load balance management, sub-mesh/torus allocation, and a message-passing interface library tuned for the K computer. We measured and evaluated the performance of the modified RSDFT code on the K computer. A 5.48 petaflops (PFLOPS) sustained performance was measured for an iteration of a self-consistent field calculation for a 107,292-atom Si nanowire simulation using 82,944 compute nodes, which is 51.67% of the K computer’s peak performance of 10.62 PFLOPS. This scale of simulation enables analysis of the behavior of a silicon nanowire with a diameter of 10–20 nm.
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A set of level 3 basic linear algebra subprograms
Jack Dongarra, Jeremy Du Croz, Sven Hammarling et al. · ACM Transactions on Mathematical Software · 1990 · 1.8K citations · Full text