Evolution of Filament Formation in Ni/HfO₂/SiO<i>_x</i>/Si‐Based RRAM Devices

Abstract

The evolution of metal nanofilaments formed in dielectric layers of Ni/HfO2/SiOx/n+Si stacks and the role of Ni atoms during SET (low resistance) and RESET (high resistance) are quantitatively studied. The shape of the filaments is confirmed as conical with a broader distribution in HfO2 after a positive switching voltage is applied to the Ni electrode during SET. Residual Ni atoms are detected in the dielectric layers after RESET. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.