Effect of low thermal budget annealing on surface passivation of silicon by ALD based aluminum oxide films

Abstract

Silicon surface passivation is studied using Al₂O₃ films by the thermal ALD process. A surface recombination velocity of below 10 cm s⁻¹ is realized for short annealing times (∼100 s). As-deposited and annealed films show the presence of positive fixed charges.