Radiation hardness evaluation of thin film ferroelectric capacitors

T. F. Wrobel, J. Bullington, L. J. Schwee

OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) · 1987 · 10 citations · 0 references

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Abstract

Ferroelectric capacitor structures have been evaluated in total dose, dose-rate and cosmic ray environments. The capacitors were found to maintain polarization following an exposure of approx.5 Mrad (Si), approx.1 x 10/sup 11/ rad(Si)/s and approx.6 x 10/sup 6/ Cf-252 fission fragments per cm/sup 2/. The capacitors show minimal degradation in the P versus E hysteresis curve following approx.10 Mrad(Si), approx.1 x 10/sup 11/ rad(Si)/s and approx.6 x 10/sup 6/ Cf-252 fission fragments per cm/sup 2/. In addition, no heavy ion induced hard errors were observed for capacitor bias levels below the intrinsic breakdown voltage of 20 V.