RF and microwave high‐Q floating active inductor design and implementation

TLDR

The paper presents a high‑Q floating active inductor for RF and microwave applications. The design uses two cascaded pairs of highly linear capacitance gyrators to form a symmetric, reciprocal structure, and a prototype with an LC band‑pass filter was fabricated to demonstrate feasibility. The prototype exhibits fully symmetrical two‑port behavior, a very low equivalent resistance of 0.0039 Ω yielding a high Q, and the accompanying band‑pass filter centers at 430 MHz with a 9 MHz bandwidth. © 2014 John Wiley & Sons, Ltd.

Abstract

Summary In this paper, a high‐Q floating active inductor (FAI), suitable for RF and microwave applications, is presented. The proposed FAI is based on two cascaded pairs of highly linear capacitance gyrators, which provide a symmetric and reciprocal structure. The proposed FAI shows fully symmetrical two‐port characteristics, high quality factor and high linearity. As a feasibility demonstration, a prototype of the designed FAI has been fabricated, together with an LC series band‐pass filter. At the operating frequency, the real part of the impedance of the equivalent FAI is very low (Req = 0.0039 Ω), providing a very high quality factor. The filter has a central frequency of 430 MHz and a −3 dB bandwidth of about 9 MHz. Copyright © 2014 John Wiley & Sons, Ltd.