Bistable Resistive Switching in Al[sub 2]O[sub 3] Memory Thin Films

Abstract

In this study, we investigate the resistive switching behavior of radio frequency (rf)-sputtered thin films. It is observed that both high-conducting state (ON state) and low-conducting state (OFF state) are stable and reproducible during successive resistive switchings by dc voltage sweeping. The ratio of resistance of the ON and OFF state is over . Such a reproducible resistive switching can be performed at , and the resistance of the ON state can be altered by various current compliances. The conduction mechanisms of the ON and OFF states are demonstrated as ohmic conduction and Frenkel-Poole emission, respectively. Both states, performed by dc voltage sweeping and applying short pulse, are stable over at a read voltage of and the electrical-pulse-induced resistance change (EPIR) phenomenon is demonstrated, which are all important properties for further resistive random access memory application.