Extrapolated<i>f</i>_maxfor carbon nanotube field-effect transistors

Abstract

Compact expressions are derived for the maximum operating frequency of carbon nanotube field-effect transistors. The expressions are shown to be applicable over wide ranges of physical properties, parasitic resistances, and gate biases. The utility of the expressions is demonstrated by their prompting of a conservative device design that should lead to fmax>0.5 THz.