Publication | Closed Access
A new concept for the lateral DMOS transistor for smart power IC's
28
Citations
4
References
2003
Year
Unknown Venue
Device ModelingLow-power ElectronicsElectrical EngineeringLateral Dmos TransistorEngineeringLateral DmosfetVertical TrenchPower DevicePower IcElectronic EngineeringNew ConceptBias Temperature InstabilityPower Semiconductor DeviceSmart PowerSmart Power IcPower ElectronicsMicroelectronics
In this paper, a new concept of lateral DMOSFET for smart power integrated circuits is proposed, in which a vertical trench is used under the gate end in the drift region.
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