2003 · 28 citations · 4 references
EngineeringElectrical EngineeringMicroelectronicsPower ElectronicsSemiconductor DevicesCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyElectronics TechnologyIntegrated Circuit DesignIntegrated Circuit DevicesMetal-oxide-semiconductor Field-effect TransistorsLateral Power DevicesPower Mosfets
In this paper, a new concept of lateral DMOSFET for smart power integrated circuits is proposed, in which a vertical trench is used under the gate end in the drift region.
4
A novel LDMOS structure with a step gate oxide
Der-Gao Lin, S.L. Tu, Yee-Chaung See et al. · 2002 · 38 citations
Optimized 60-V Lateral Dmos Devices for Vlsi Power Applications
Oh‐Kyong Kwon, T. Efland, S.D.S. Malhi et al. · 1991 · 27 citations
Engineering, Computer Engineering, Electrical Engineering +17