Microwave Dielectric Properties and Microstructures of V₂O₅-Modified Zr_0.8Sn_0.2TiO₄ Ceramics

Abstract

The effects of V 2 O 5 addition on the microwave dielectric properties and the microstructures of (Zr 0.8 , Sn 0.2 )TiO 4 ceramics have been investigated. It is found that low-level doping of ZnO (1 wt%) and V 2 O 5 (up to 2 wt%) can significantly improve the densification ability and the dielectric properties of (Zr 0.8 , Sn 0.2 )TiO 4 ceramics. (Zr 0.8 , Sn 0.2 )TiO 4 ceramics with additives could be sintered to a theoretical density higher than 95% at 1300°C due to the liquid-phase effect of V 2 O 5 addition. The dielectric constant ( ε r ) increased with increasing sintering temperature and saturated at 1300°C. The temperature coefficient of resonant frequency (τ f ) was not significantly affected while the unloaded quality factor Q was promoted by V 2 O 5 addition. The ε r value of 37.3, the Q × f value of 51500 (at 7 GHz) and the τ f value of -2.1 ppm/°C were obtained for the 1 wt% ZnO-doped (Zr 0.8 , Sn 0.2 )TiO 4 ceramics with 1 wt% V 2 O 5 addition sintered at 1300°C.