A new concept for a non punch through IGBT with MOSFET like switching characteristics

Abstract

An IGBT (insulated-gate bipolar transistor) is presented which is based on bulk silicon material without a buffer layer. In contrast to other devices the carrier lifetime was kept as high as possible. It is shown that such a device with a breakdown voltage of 1400 V and a short-circuit capability of 1200 V at 20 V gate voltage has on-state and switching losses that are not higher-maybe even lower- than those of a buffer layer device if its backside p-emitter efficiency is kept low enough.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>